HIP2100IBZT - Renesas Electronics America Inc

Manufacturer Part Number

HIP2100IBZT

Manufacturer

Renesas Electronics America

Introduction

The HIP2100IBZT is a high-performance power management integrated circuit, specifically designed as a half-bridge gate driver for N-Channel MOSFETs.

Product Features and Performance

Half-Bridge Driven Configuration

Independent Channel Type

Two Number of Drivers

N-Channel MOSFET Gate Type

9V to 14V Supply Voltage Range

4V Logic Voltage VIL

7V Logic Voltage VIH

2A Current Peak Output Source

2A Current Peak Output Sink

Non-Inverting Input Type

114 V High Side Voltage Max (Bootstrap)

10ns Rise and Fall Time (Typical)

-55°C to 150°C Operating Temperature Range

Surface Mount Mounting Type

High-Performance Power Management Integrated Circuit

Product Advantages

Supports High-Frequency Operation

Robust Against Negative Transients

Bootstrap Circuitry Allows High Side Gate Drive

High Drive Strength for Fast Switching

Thermal Shutdown Protection

Key Technical Parameters

9V ~ 14V Voltage Supply Range

4V, 7V Logic Voltage - VIL, VIH

2A, 2A Current Peak Output Source and Sink

114 V High Side Voltage - Max (Bootstrap)

10ns Rise / Fall Time (Typ)

-55°C ~ 150°C Operating Temperature Range

Quality and Safety Features

Built-in Under Voltage Lockout (UVLO)

Thermal Shutdown Protection

Integrated Dead-Time Protection

Compatibility

Compatible with N-Channel MOSFETs

Suitable for Standard 8-SOIC Footprint

Application Areas

Switch Mode Power Supplies (SMPS)

Motor Drives

DC-DC Converters

Battery Powered Supplies

High Frequency or High-Density Power Converters

Product Lifecycle

Active Product Status

Long-Term Supply Availability

Several Key Reasons to Choose This Product

Energy-Efficient Performance Enhancing Power Systems Efficiency

High-Density Integrated Package Saving Board Space

Extended Operating Temperature Range Suitable for Harsh Environments

Fast Switching Capabilities Reducing Transition Losses

Reliable Safety Features Ensuring System Protection

Broad Application Suitability Facilitating Design Versatility