Manufacturer Part Number
HIP2100IBZ
Manufacturer
Renesas Electronics America
Introduction
HIP2100IBZ is a high-frequency half-bridge N-Channel MOSFET driver designed for power management applications.
Product Features and Performance
Dual independent driver channels
2A peak source and sink current capability
Wide supply voltage range 9V to 14V
Non-inverting input type
Fast rise and fall times (10ns typical)
Supports high side bootstrap voltages up to 114V
Operational temperature range from -55°C to 150°C
Surface Mount 8-SOIC packaging
Product Advantages
High current driving capability for demanding applications
Integrated under-voltage lockout for better performance
Prolonged device life with high-temperature tolerance
Compact design ideal for space-constrained applications
Key Technical Parameters
Driven Configuration: Half-Bridge
Channel Type: Independent
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Logic Voltage - VIL, VIH: 4V, 7V
Current - Peak Output: 2A Source, 2A Sink
High Side Voltage (Bootstrap): Max 114V
Rise/Fall Time: 10ns / 10ns
Quality and Safety Features
Under-voltage lockout for safe operation
Wide temperature operational range ensures reliability under extreme conditions
Compatibility
Compatible with a wide range of N-Channel MOSFET power devices
Application Areas
Switch mode power supplies
DC-DC converters
Motor controllers
Class-D amplifiers
High-frequency power management systems
Product Lifecycle
Status: Active
Not nearing discontinuation, replacements, and upgrades readily available
Several Key Reasons to Choose This Product
Robust thermal performance for high reliability
Flexible design suitable for various power applications
Efficient power handling capabilities for enhanced performance
Ease of integration with standard surface mount manufacturing processes
Backed by Renesas' renowned quality and support