Manufacturer Part Number
R1LV0408DSB-5SI#B0
Manufacturer
renesas-electronics-america
Introduction
This SRAM memory device is designed to offer high-speed memory storage solutions.
Product Features and Performance
Volatile memory type utilizing SRAM technology
Parallel memory interface ensures responsiveness
Quick access and write cycle time of 55 ns
Product Advantages
Suitable for high performance and rapid processing applications
High reliability with a wide range of operational temperatures from -40°C to 85°C
Key Technical Parameters
Memory Size: 4Mbit
Memory Organization: 512K x 8
Voltage Supply: 2.7V to 3.6V
Access Time: 55ns
Quality and Safety Features
Operates effectively in extreme temperatures ranging from -40°C to 85°C
Compatibility
Implemented in systems requiring high-speed data access and storage
Compatible with applications requiring a 32-SOIC package
Application Areas
Telecommunication
Networking
Industrial control systems
Product Lifecycle
Status: Obsolete
Advised to check for alternative products or upgrades due to discontinuation
Several Key Reasons to Choose This Product
Efficient for systems needing rapid access to volatile memory
Capable of functioning stably under extreme temperature conditions
Provides a significant 4Mbit storage capacity for robust data management
Direct compatibility with various electronic applications and devices
R1LV0408DSB-7LI#SORENESA