Manufacturer Part Number
R1LV0408DSP-5SI#S0
Manufacturer
Renesas Electronics Corporation
Introduction
This is a 4Mbit Parallel SRAM memory IC from Renesas Electronics Corporation.
Product Features and Performance
4Mbit of Parallel SRAM memory
55ns Access Time
55ns Write Cycle Time
Operates from 2.7V to 3.6V
Industrial Temperature Range: -40°C to 85°C
Product Advantages
High-Speed SRAM Memory
Wide Operating Voltage Range
Industrial Temperature Capability
Key Technical Parameters
Memory Size: 4Mbit
Memory Organization: 512K x 8
Memory Type: Volatile SRAM
Memory Interface: Parallel
Access Time: 55ns
Write Cycle Time: 55ns
Operating Voltage: 2.7V to 3.6V
Operating Temperature: -40°C to 85°C
Quality and Safety Features
RoHS Compliant
32-SOIC Package
Compatibility
This SRAM memory IC is compatible with a wide range of embedded systems and microcontroller applications.
Application Areas
Industrial Automation
Telecommunications Equipment
Computing and Networking Devices
Medical Devices
Military and Aerospace Systems
Product Lifecycle
This Renesas SRAM product is an active and readily available component. Replacements and upgrades may be available in the future as technology advances.
Key Reasons to Choose This Product
High-performance SRAM memory with fast access and write speeds
Wide operating voltage and temperature range for industrial applications
Proven reliability and quality from a leading semiconductor manufacturer
Compatibility with a wide range of embedded systems and microcontrollers