Manufacturer Part Number
NESG3031M14-T3-A
Manufacturer
Renesas Electronics Corporation
Introduction
This is a high-performance NPN bipolar junction transistor (BJT) designed for radio frequency (RF) applications.
Product Features and Performance
Power rating of 150mW
Collector-emitter breakdown voltage of 4.3V
Collector current rating of 35mA
DC current gain of 220 (minimum) at 6mA, 2V
Gain range of 7.5dB to 16dB
Noise figure of 0.6dB to 1.5dB at 2.4GHz to 5.8GHz
Product Advantages
Excellent high-frequency performance
Suitable for use in RF amplifier and oscillator circuits
Small surface mount package for compact design
Key Technical Parameters
Transistor type: NPN
Mounting type: Surface mount
Quality and Safety Features
RoHS compliance status not applicable
Compatibility
Suitable for use in a variety of RF applications
Application Areas
RF amplifier circuits
RF oscillator circuits
Wireless communication systems
Product Lifecycle
Current production status unknown
Replacement or upgrade options may be available, but not confirmed
Key Reasons to Choose This Product
Exceptional high-frequency performance
Compact surface mount package
Suitable for a range of RF applications
NESG250134-T1Renesas Electronics Corporation