Manufacturer Part Number
NESG270034-T1-AZ
Manufacturer
CEL (California Eastern Laboratories)
Introduction
This is a discrete semiconductor product, specifically a bipolar junction transistor (BJT) for RF applications.
Product Features and Performance
Supports operating temperatures up to 150°C (TJ)
Maximum power dissipation of 1.9W
Collector-Emitter breakdown voltage up to 9.2V
Maximum collector current of 750mA
NPN transistor type
Minimum DC current gain (hFE) of 80 @ 100mA, 3V
RF gain of 19.5dB
Product Advantages
Suitable for high-temperature and high-power RF applications
Reliable performance within the specified operating parameters
Small surface-mount package for efficient board space utilization
Key Technical Parameters
Voltage Collector Emitter Breakdown (Max): 9.2V
Current Collector (Ic) (Max): 750mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 100mA, 3V
Gain: 19.5dB
Operating Temperature: 150°C (TJ)
Power Max: 1.9W
Quality and Safety Features
RoHS3 compliant
Compatibility
Manufacturer's packaging: SOT-89
Package / Case: TO-243AA
Supplier Device Package: SOT-89
Package: Tape & Reel (TR)
Application Areas
Suitable for high-temperature and high-power RF applications, such as power amplifiers, oscillators, and RF switches.
Product Lifecycle
Currently in production
Replacements or upgrades may be available in the future
Key Reasons to Choose This Product
Supports high-temperature and high-power operation
Reliable performance with high DC current gain and RF gain
Compact surface-mount package for efficient board space utilization
RoHS3 compliance for environmental sustainability
