Manufacturer Part Number
NESG250134-T1-AZ
Manufacturer
CEL (California Eastern Laboratories)
Introduction
This product is a high-frequency NPN bipolar junction transistor (BJT) suitable for radio frequency (RF) applications.
Product Features and Performance
High-frequency operation up to 10GHz
High current gain up to 23dB
Low collector-emitter voltage up to 9.2V
High collector current up to 500mA
Low power dissipation up to 1.5W
Product Advantages
Excellent high-frequency performance
Compact surface mount package
Reliable and robust design
Key Technical Parameters
Transistor Type: NPN
DC Current Gain (hFE): Minimum 80 @ 100mA, 3V
Frequency Transition: 10GHz
Gain: 23dB
Power Max: 1.5W
Voltage Collector Emitter Breakdown (Max): 9.2V
Current Collector (Ic) (Max): 500mA
Quality and Safety Features
Stringent manufacturing and testing processes
Meets industry safety and environmental standards
Compatibility
Suitable for a wide range of RF and high-frequency circuit designs
Application Areas
Radio frequency (RF) amplifiers
Switching circuits
High-frequency oscillators
Wireless communication systems
Product Lifecycle
This product is currently in active production and available for purchase. Replacement or upgraded models may become available in the future.
Key Reasons to Choose This Product
Excellent high-frequency performance for RF applications
Compact and reliable surface mount package
Proven track record of reliability and quality
Compatibility with a wide range of circuit designs
