ISL2111BR4Z - Renesas Electronics America Inc

Manufacturer Part Number

ISL2111BR4Z

Manufacturer

Renesas Electronics America

Introduction

The ISL2111BR4Z is a high-performance, dual-channel N-channel MOSFET gate driver from Renesas Electronics. It is designed to provide superior gate driving capabilities for power electronics applications, such as motor drives, power supplies, and power conversion systems.

Product Features and Performance

Dual independent half-bridge gate driver

Capable of driving N-channel MOSFETs or IGBTs

Wide supply voltage range of 8V to 14V

High-side gate drive voltage up to 114V

Peak output current of 3A source and 4A sink

Fast rise and fall times of 9ns and 7.5ns, respectively

Operates over a wide temperature range of -40°C to 125°C

Product Advantages

Efficient gate driving for improved system performance

Excellent noise immunity and EMI suppression

Compact 8-pin VDFN package for space-constrained designs

Robust thermal and overcurrent protection features

Key Reasons to Choose This Product

Reliable and high-performance gate driving solution

Versatile for a wide range of power electronics applications

Compact and easy-to-integrate design

Backed by Renesas' expertise in power management ICs

Quality and Safety Features

Robust overcurrent and thermal protection

ESD and latch-up protection

Meets industrial safety and reliability standards

Compatibility

The ISL2111BR4Z is compatible with a variety of N-channel MOSFETs and IGBTs, making it suitable for a wide range of power electronics applications.

Application Areas

Motor drives

Power supplies

Power conversion systems

Industrial automation and control

Product Lifecycle

The ISL2111BR4Z is an active product. There are no immediate plans for discontinuation, and Renesas offers alternative or equivalent models for this product line. Customers are advised to contact our website's sales team for the latest product information and availability.