ISL2111ARTZ-T - Renesas Electronics America Inc

Manufacturer Part Number

ISL2111ARTZ-T

Manufacturer

Renesas Electronics Corporation

Introduction

Integrated circuit (IC) designed for gate driver applications

Product Features and Performance

Dual independent MOSFET gate drivers

Capable of driving both high-side and low-side N-channel MOSFETs

Wide supply voltage range of 8V to 14V

Fast rise and fall times of 9ns and 7.5ns respectively

High peak output current of 3A source and 4A sink

Supports high-side voltage up to 114V

Operates over a wide temperature range of -40°C to 125°C

Product Advantages

Efficient MOSFET switching control

Reliable and robust performance

Compact 10-TDFN (4x4) package

Key Technical Parameters

Supply voltage: 8V to 14V

Logic voltage levels (VIL, VIH): 1.4V, 2.2V

Driven configuration: Half-bridge

Gate type: N-channel MOSFET

Rise/fall time (typical): 9ns, 7.5ns

Peak output current (source/sink): 3A, 4A

High-side voltage (max, bootstrap): 114V

Quality and Safety Features

RoHS3 compliant

Compatibility

Suitable for a wide range of power electronics and motor control applications

Application Areas

Switching power supplies

Motor drives

Inverters

Power conversion systems

Product Lifecycle

Active product, not nearing discontinuation

Replacement or upgrade options available from the manufacturer

Key Reasons to Choose

Reliable and efficient MOSFET gate driving

Wide operating voltage and temperature range

Fast switching performance

High output current capability

Compact and space-saving package