Manufacturer Part Number
ISL2110AR4Z-T
Manufacturer
Renesas Electronics America
Introduction
The ISL2110AR4Z-T is a high-performance dual N-channel MOSFET gate driver from Renesas Electronics America. It is designed to drive half-bridge power MOSFETs in various power conversion applications, such as DC-DC converters, motor drives, and power inverters.
Product Features and Performance
Dual independent N-channel MOSFET gate drivers
Wide supply voltage range of 8V to 14V
High-side voltage capability up to 114V
Peak source and sink current of 3A and 4A, respectively
Fast rise and fall times of 9ns and 7.5ns, respectively
Wide operating temperature range of -40°C to 125°C
Surface-mount 12-VFDFN exposed pad package
Product Advantages
Efficient and reliable power conversion
Compact and space-saving design
Robust performance in harsh environments
Ease of integration into various power systems
Key Reasons to Choose This Product
Reliable and high-performance gate driving solution
Suitable for a wide range of power conversion applications
Optimized for efficient and compact power system design
Proven track record of quality and safety from Renesas
Quality and Safety Features
Robust design for reliable operation
Overcurrent and undervoltage protection
Thermal shutdown and short-circuit protection
Compatibility
The ISL2110AR4Z-T is compatible with various power MOSFET devices and can be used in a variety of power conversion applications, such as:
DC-DC converters
Motor drives
Power inverters
Industrial and automotive power electronics
Application Areas
Power supplies
Motor control
Renewable energy systems
Industrial automation
Automotive electronics
Product Lifecycle
The ISL2110AR4Z-T is an obsolete product, meaning it is no longer in active production or available for new design-ins. However, Renesas may have equivalent or alternative models available that can meet your requirements. Please contact our sales team via our website for more information on replacement options.