Manufacturer Part Number
IDT71V124SA12Y8
Manufacturer
renesas-electronics-america
Introduction
The IDT71V124SA12Y8 is a high-performance 1Mbit asynchronous SRAM memory device with a parallel interface. It offers fast read and write access times of 12ns, making it suitable for a variety of applications requiring reliable, high-speed memory storage.
Product Features and Performance
1Mbit SRAM memory capacity
Asynchronous SRAM technology
Parallel memory interface
12ns read and write cycle times
3V to 3.6V operating voltage range
0°C to 70°C operating temperature range
32-pin BSOJ surface mount package
Product Advantages
High-speed performance for time-critical applications
Low power consumption for energy-efficient designs
Reliable and durable SRAM technology
Easy integration with parallel-based systems
Key Reasons to Choose This Product
Exceptional speed and responsiveness for demanding applications
Proven reliability and long-term availability from a trusted manufacturer
Flexible operating parameters to accommodate a wide range of system requirements
Compact and efficient package design for space-constrained designs
Quality and Safety Features
Rigorous quality control and testing processes
Compliance with industry standards and regulations
Compatibility
The IDT71V124SA12Y8 is compatible with a variety of parallel-based systems and microcontrollers.
Application Areas
Industrial automation and control systems
Telecommunications equipment
Embedded computing and processing platforms
Medical devices and instrumentation
Transportation and automotive electronics
Product Lifecycle
The IDT71V124SA12Y8 is an obsolete product, meaning it is no longer in active production. However, there may be equivalent or alternative models available from Renesas Electronics America or other memory manufacturers. Customers are advised to contact our website's sales team for more information on current product options and availability.