Manufacturer Part Number
IDT71V124SA12PH
Manufacturer
Renesas Electronics Corporation
Introduction
1Mbit Asynchronous SRAM with 12ns access time
Product Features and Performance
1Mbit memory capacity
128K x 8 memory organization
12ns access time
3V to 3.6V operating voltage
Parallel memory interface
12ns write cycle time (word, page)
0°C to 70°C operating temperature range
Product Advantages
High-speed asynchronous SRAM for performance-critical applications
Wide operating voltage range for flexibility
Parallel interface for simple integration
Key Technical Parameters
Memory Type: Volatile SRAM
Memory Size: 1Mbit
Memory Organization: 128K x 8
Access Time: 12ns
Write Cycle Time: 12ns (word, page)
Operating Voltage: 3V to 3.6V
Operating Temperature: 0°C to 70°C
Quality and Safety Features
RoHS non-compliant
Compatibility
32-TSOP II package
Surface mount design
Application Areas
Performance-critical embedded systems
Industrial automation
Military and aerospace electronics
Product Lifecycle
This product is an established SRAM solution and is not nearing discontinuation.
Replacement or upgrade options are available from the manufacturer.
Key Reasons to Choose This Product
High-speed asynchronous SRAM with 12ns access time for performance-critical applications
Wide operating voltage range for flexibility in system design
Parallel interface for simple integration into existing systems
Established SRAM solution with available replacement and upgrade options
IDT71V124SA10PHGIDT (Renesas Electronics Corporation)