Manufacturer Part Number
IDT71V124SA12Y
Manufacturer
Renesas Electronics America
Introduction
The IDT71V124SA12Y is an asynchronous SRAM memory chip designed for high-speed applications requiring a volatile memory solution.
Product Features and Performance
Asynchronous SRAM technology
Parallel memory interface
1Mbit memory size
Organized as 128K x 8
Fast access time of 12 ns
Write Cycle Time Word, Page: 12ns
Product Advantages
High-speed performance suitable for various demanding applications
Simple integration with most microcontrollers due to parallel interface
Key Technical Parameters
Memory Type: Volatile
Memory Size: 1Mbit
Memory Organization: 128K x 8
Access Time: 12 ns
Voltage Supply: 3V ~ 3.6V
Operating Temperature: 0°C ~ 70°C
Quality and Safety Features
Manufactured under stringent standards for reliability and performance consistency
Compatibility
Compatible with systems requiring high-speed SRAM with a parallel interface
Application Areas
Telecommunications
Networking
High-speed computing applications
Industrial controls
Product Lifecycle
Obsolete status
Customers should seek replacements or upgrades due to discontinuation
Several Key Reasons to Choose This Product
Reliable performance with fast 12 ns access time
Flexible 3V to 3.6V supply voltage range
Suitable for a wide range of high-speed applications
Renesas Electronics America’s reputation for quality and durability
Obsolete status encourages consideration of future-proof alternatives with similar specifications
IDT71V124SA12PHGIIDT (Renesas Electronics Corporation)