Manufacturer Part Number
71V416S12PHGI
Manufacturer
Renesas Electronics America
Introduction
The 71V416S12PHGI is a high-speed static random-access memory (SRAM) device designed for fast read and write operations.
Product Features and Performance
4Mbit memory capacity
Asynchronous SRAM technology
Parallel memory interface
12ns access and write cycle time
256K x 16 memory organization
Surface mount 44-TSOP II package
Operational across a wide voltage range (3V to 3.6V)
Stable operation over an extended temperature range -40°C to 85°C
Product Advantages
Rapid access time for high-performance applications
Enhanced durability with wide operating temperature range
Easy integration due to standard parallel interface
Robust physical package suitable for various PCB designs
Key Technical Parameters
Memory Size: 4Mbit
Memory Format: SRAM
Access Time: 12 ns
Write Cycle Time - Word, Page: 12ns
Memory Organization: 256K x 16
Voltage - Supply: 3V ~ 3.6V
Operating Temperature: -40°C ~ 85°C
Quality and Safety Features
Tested for reliable performance across temperature and voltage ranges
Designed to meet stringent industry standards for quality and safety
Compatibility
Compatible with a broad range of microprocessors and digital signal processors that require fast memory access
Application Areas
Telecommunications
Networking equipment
Industrial control systems
Gaming and entertainment systems
Medical electronics
Product Lifecycle
Active status, indicating current production with no near-term discontinuation forecast
Possible future upgrades may include higher density memories or faster access times
Several Key Reasons to Choose This Product
High-speed access time enables improved system performance
Large memory organization fitting complex applications
Stable operation in a range of environmental conditions
Compatibility with a diverse array of hardware and systems
Ongoing product support from Renesas Electronics America
Well-suited for demanding applications
Availability in tube packaging for convenient handling and storage