71V416L12PHG - Renesas Electronics America Inc

Manufacturer Part Number

71V416L12PHG

Manufacturer

renesas-electronics-america

Introduction

This SRAM - Asynchronous memory from renesas-electronics-america is designed to offer high-speed data storage and transfer for a variety of applications with its parallel memory interface and surface mount packaging.

Product Features and Performance

Memory Type: Volatile

Memory Format: SRAM Asynchronous

Memory Size: 4Mbit

Memory Organization: 256K x 16

Memory Interface: Parallel

Write Cycle Time Word, Page: 12ns

Access Time: 12 ns

Voltage Supply Range: 3V to 3.6V

Operating Temperature Range: 0°C to 70°C

Product Advantages

High speed parallel interface ensures rapid data handling

Compact 44-TSOP II package ideal for space-constrained applications

Supports a broad voltage range, enhancing compatibility

Key Technical Parameters

Access Time: 12 ns

Write Cycle Time: 12 ns

Memory Size: 4 Mbit

Operating Temperature: 0°C ~ 70°C

Voltage Supply: 3V ~ 3.6V

Quality and Safety Features

Designed for reliable operation within standard industrial temperature ranges

Constructed in compliance with industry-standard protocols and safety measures

Compatibility

Compatible with systems requiring a 3V to 3.6V power supply and a parallel memory interface

Application Areas

Embedded systems

Gaming consoles

General digital signal processing

Industrial automation systems

Product Lifecycle

Currently in active production

Not nearing discontinuation

Future upgrades and replacements available upon reaching end-of-life stage

Several Key Reasons to Choose This Product

Fast access and write cycle time for efficient performance

Supports a broad range of operating temperatures for versatile use in different environments

Compact and robust package suitable for use in space-sensitive electronics configurations

Reliable manufacturing from renesas-electronics-america ensures long-term dependability