Manufacturer Part Number
71V416L12PHGI8
Manufacturer
Renesas Electronics America
Introduction
This is a 4Mbit SRAM (Static Random Access Memory) integrated circuit from Renesas Electronics America. It features a parallel memory interface, operating voltage of 3V to 3.6V, and a wide operating temperature range of -40°C to 85°C. The memory is organized as 256K words x 16 bits and has an ultra-fast access time of 12ns.
Product Features and Performance
4Mbit SRAM memory capacity
256K x 16 bit memory organization
Parallel memory interface
Asynchronous SRAM technology
12ns write cycle time (word, page)
12ns access time
3V to 3.6V operating voltage
-40°C to 85°C operating temperature range
Surface mount 44-TSOP (0.400", 10.16mm Width) package
Product Advantages
High-density 4Mbit SRAM memory
Ultra-fast performance with 12ns access time
Wide operating voltage and temperature range
Surface mount package for easy integration
Key Reasons to Choose This Product
Exceptional performance and reliability for demanding applications
Ideal for use in industrial, automotive, and other embedded systems
Cost-effective solution for high-density memory requirements
Backed by Renesas' reputation for quality and innovation
Quality and Safety Features
Rigorous quality control and testing
Compliance with industry standards and regulations
Designed for reliable and safe operation
Compatibility
Suitable for a wide range of embedded systems and applications
Application Areas
Industrial automation and control
Automotive electronics
Telecommunications equipment
Medical devices
Consumer electronics
Product Lifecycle
The 71V416L12PHGI8 is an active and currently available product. Our website's sales team may offer alternative or equivalent models in the future as technology and market demands evolve. Customers are advised to contact our website's sales team for the latest product information and availability.