Manufacturer Part Number
2SC4228-T1-A
Manufacturer
Renesas Electronics Corporation
Introduction
Discrete Semiconductor Product
Bipolar Junction Transistor (BJT) for RF applications
Product Features and Performance
150°C maximum junction temperature
150mW maximum power dissipation
10V maximum collector-emitter breakdown voltage
35mA maximum collector current
NPN transistor type
Minimum DC current gain of 50 at 5mA, 3V
8GHz transition frequency
5dB gain
9dB noise figure at 2GHz
Product Advantages
Suitable for high-frequency, high-speed switching and amplification applications
Compact SOT-323 surface mount package
Key Technical Parameters
Operating temperature range: -55°C to 150°C
Collector-emitter breakdown voltage: 10V
Collector current: 35mA
DC current gain: 50 (min) at 5mA, 3V
Transition frequency: 8GHz
Gain: 7.5dB
Noise figure: 1.9dB at 2GHz
Quality and Safety Features
RoHS compliance status not applicable
Compatibility
SOT-323 surface mount package
Application Areas
High-frequency, high-speed switching and amplification circuits
RF amplifier and mixer stages in wireless communication systems
Product Lifecycle
Current product offering, no information on discontinuation or replacements
Key Reasons to Choose
Suitable for high-frequency, high-speed applications
Compact surface mount package
Good RF performance with high transition frequency, gain, and low noise figure