Manufacturer Part Number
2SC4227-T1-A
Manufacturer
CEL (California Eastern Laboratories)
Introduction
Discrete Semiconductor Product
Bipolar Junction Transistor (BJT) for RF applications
Product Features and Performance
High frequency operation up to 7GHz
High current gain of 40 at 7mA, 3V
Low noise figure of 1.4dB at 1GHz
Power handling capability of 150mW
Product Advantages
Suitable for RF amplifier and switching applications
Compact surface mount packaging
Wide operating temperature range up to 150°C
Key Technical Parameters
Collector-Emitter Breakdown Voltage: 10V
Collector Current (max): 65mA
Power Dissipation (max): 150mW
Transition Frequency: 7GHz
Current Gain: 12dB
Quality and Safety Features
Reliable operation in high temperature environments
RoHS compliant for environmental safety
Compatibility
Suitable for surface mount assembly
Compatible with standard SOT-323 footprint
Application Areas
RF amplifiers
Wireless communication systems
Radio frequency (RF) circuits
Product Lifecycle
Currently in production
Replacement and upgrade options available
Key Reasons to Choose
High frequency performance for RF applications
Low noise characteristics for sensitive circuits
Compact surface mount packaging for space-constrained designs
Wide operating temperature range for harsh environments
2SC4227-T1NEC