Manufacturer Part Number
2SC4228-T1-A
Manufacturer
CEL (California Eastern Laboratories)
Introduction
Discrete Semiconductor Product
Bipolar Junction Transistor (BJT) for RF applications
Product Features and Performance
NPN Transistor
High Frequency Operation up to 8GHz
Low Noise Figure of 1.9dB at 2GHz
Power Handling up to 150mW
High Current Gain of 50 at 5mA, 3V
Gain of 7.5dB
Product Advantages
Excellent High Frequency Performance
Low Noise Operation
High Current Gain
Key Technical Parameters
Collector-Emitter Breakdown Voltage: 10V (Max)
Collector Current: 35mA (Max)
Operating Temperature: 150°C (Max Junction Temperature)
Package: SOT-323 (SC-70)
Quality and Safety Features
Qualified to Surface Mount Soldering Process
Reliable Operation within Specified Temperature Range
Compatibility
Suitable for RF Amplifier, Mixer, and Oscillator Circuits
Compatible with Standard SOT-323 Footprint
Application Areas
Wireless Communication Systems
Radar Systems
Test and Measurement Equipment
Product Lifecycle
Currently in Active Production
Replacement parts and upgrades available
Key Reasons to Choose This Product
Excellent High Frequency Performance for RF Applications
Low Noise Operation Improves System Sensitivity
High Current Gain for Efficient Circuit Design
Reliable Surface Mount Packaging for Easy Integration
Availability of Replacement Parts and Upgrades
2SC4228-T2NEC