Manufacturer Part Number
PSMN1R5-30BLEJ
Manufacturer
Nexperia
Introduction
High-power N-channel MOSFET transistor optimized for high-efficiency power conversion applications
Product Features and Performance
Very low on-state resistance for high efficiency
Robust avalanche ruggedness
High power density
Excellent switching performance
Optimized for high-frequency and high-current applications
Product Advantages
Extremely low on-resistance for high efficiency
Fast switching for high-frequency operation
Robust against avalanche events
Compact D2PAK package for high power density
Key Technical Parameters
Drain-Source Voltage (Vds): 30V
Maximum Gate-Source Voltage (Vgs): ±20V
On-State Resistance (Rdson): 1.5mΩ @ 25A, 10V
Continuous Drain Current (Id): 120A @ 25°C
Input Capacitance (Ciss): 14934pF @ 15V
Power Dissipation (Pd): 401W @ Tc
Quality and Safety Features
RoHS3 compliant
Designed and manufactured to high quality standards
Compatibility
Surface mount package (D2PAK)
Suitable for high-power, high-frequency power conversion applications
Application Areas
Switch-mode power supplies
Motor drives
Power factor correction (PFC)
Inverters
DC-DC converters
Product Lifecycle
Current production, no discontinuation planned
Replacement and upgrade options available
Key Reasons to Choose This Product
Extremely low on-resistance for high efficiency
Fast switching for high-frequency operation
Robust against avalanche events
High power density in compact D2PAK package
Designed and manufactured to high quality standards
PSMN1R3-30YL115Freescale / NXP Semiconductors