Manufacturer Part Number
PSMN1R4-30YLDX
Manufacturer
Nexperia
Introduction
The PSMN1R4-30YLDX is a high-performance N-channel MOSFET transistor from Nexperia, designed for a wide range of power management and switching applications.
Product Features and Performance
30V drain-to-source voltage
42mΩ maximum on-resistance at 25A and 10V gate-to-source voltage
100A continuous drain current at 25°C case temperature
Low gate charge of 54.8nC at 10V gate-to-source voltage
Wide operating temperature range of -55°C to 175°C
Product Advantages
Low on-resistance for high efficiency
High current handling capability
Compact LFPAK56 (Power-SO8) package
Suitable for high-frequency switching applications
Key Technical Parameters
Drain-to-source voltage (Vdss): 30V
Maximum gate-to-source voltage (Vgs): ±20V
On-resistance (Rds(on)): 1.42mΩ @ 25A, 10V
Continuous drain current (Id): 100A @ 25°C case temperature
Input capacitance (Ciss): 3840pF @ 15V
Power dissipation (Ptot): 166W @ 25°C case temperature
Quality and Safety Features
RoHS3 compliant
Suitable for lead-free soldering
Compatibility
This MOSFET is compatible with various power supply, motor control, and switching applications.
Application Areas
Switch-mode power supplies
Motor drives
Power inverters
Battery management systems
Industrial and automotive electronics
Product Lifecycle
This product is currently in production and not nearing discontinuation. Replacement or upgrade options may be available from Nexperia.
Key Reasons to Choose This Product
High efficiency due to low on-resistance
Excellent current handling capability
Compact and thermally efficient LFPAK56 package
Suitable for high-frequency switching applications
Wide operating temperature range
RoHS3 compliance for environmental sustainability
PSMN1R3-30YLFreescale / NXP Semiconductors