Manufacturer Part Number
PSMN1R2-30YLDX
Manufacturer
Nexperia
Introduction
Discrete Semiconductor Products
Transistors FETs, MOSFETs Single
Product Features and Performance
RoHS3 Compliant
Manufacturer's packaging: LFPAK56, Power-SO8
Base Product Number: PSMN1R2
Package / Case: SC-100, SOT-669
Supplier Device Package: LFPAK56, Power-SO8
Package: Tape & Reel (TR)
Operating Temperature: -55°C ~ 175°C (TJ)
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Rds On (Max) @ Id, Vgs: 1.24mOhm @ 25A, 10V
Technology: MOSFET (Metal Oxide)
Current Continuous Drain (Id) @ 25°C: 100A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4616 pF @ 15 V
Power Dissipation (Max): 194W (Tc)
FET Type: N-Channel
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Mounting Type: Surface Mount
Product Advantages
High current handling capability
Low on-resistance
High power dissipation
Wide operating temperature range
Key Technical Parameters
Drain to Source Voltage (Vdss): 30 V
Rds On (Max) @ Id, Vgs: 1.24mOhm @ 25A, 10V
Current Continuous Drain (Id) @ 25°C: 100A (Tc)
Power Dissipation (Max): 194W (Tc)
Quality and Safety Features
RoHS3 Compliant
Meets environmental standards
Compatibility
Suitable for a wide range of power management and control applications
Application Areas
Power management
Motor control
Switch-mode power supplies
Industrial automation
Automotive electronics
Product Lifecycle
This product is currently available and not nearing discontinuation.
Replacement or upgrade options may be available from the manufacturer.
Several Key Reasons to Choose This Product
High current handling and low on-resistance for efficient power management
Wide operating temperature range for reliability in diverse environments
High power dissipation capability for demanding applications
RoHS3 compliance for environmental responsibility
Compatibility with a wide range of power management and control systems
PSMN1R5-30BLEFreescale / NXP Semiconductors