Manufacturer Part Number
PMV90ENER
Manufacturer
Nexperia
Introduction
Discrete Semiconductor Product
N-Channel MOSFET Transistor
Product Features and Performance
Surface Mount, TO-236-3 (SC-59, SOT-23-3) Package
Operating Temperature Range: -55°C to 150°C
Drain-to-Source Voltage (Vdss): 30V
Maximum Gate-to-Source Voltage (Vgs): ±20V
On-State Resistance (Rds(on)): 72mΩ @ 3A, 10V
Continuous Drain Current (Id): 3A @ 25°C
Input Capacitance (Ciss): 160pF @ 15V
Power Dissipation (Ptot): 460mW
Product Advantages
Low on-state resistance for efficient power switching
Wide operating temperature range
Suitable for high-frequency and high-efficiency applications
Key Technical Parameters
MOSFET Technology: Metal Oxide Semiconductor Field Effect Transistor (MOSFET)
FET Type: N-Channel
Threshold Voltage (Vgs(th)): 2.5V @ 250μA
Gate Charge (Qg): 5.5nC @ 10V
Drive Voltage Range: 4.5V to 10V
Quality and Safety Features
RoHS 3 Compliant
Reliable and durable performance
Compatibility
Surface Mount, TO-236AB package
Suitable for various power conversion and control applications
Application Areas
Power supplies, motor drives, and other power electronics
Switching regulators, converters, and amplifiers
Product Lifecycle
Currently in production
Replacements and upgrades may be available in the future
Key Reasons to Choose This Product
Efficient power switching with low on-state resistance
Wide operating temperature range for diverse applications
Reliable and durable performance due to MOSFET technology
Compatibility with surface mount assembly and power electronics applications
PMV65XP.215Freescale / NXP Semiconductors