Manufacturer Part Number
PMV120ENEAR
Manufacturer
Nexperia
Introduction
The PMV120ENEAR is a discrete semiconductor product in the form of a N-channel MOSFET transistor.
Product Features and Performance
Drain to Source Voltage (Vdss) of 60V
Vgs (Max) of ±20V
Rds On (Max) of 123mOhm @ 2.1A, 10V
Continuous Drain Current (Id) of 2.1A @ 25°C
Input Capacitance (Ciss) of 275pF @ 30V
Power Dissipation (Max) of 513mW (Ta), 6.4W (Tc)
Gate Charge (Qg) of 7.4nC @ 10V
Product Advantages
Automotive qualified (AEC-Q101)
Suitable for surface mount applications
Compact TO-236AB package
Key Technical Parameters
MOSFET Technology
N-Channel FET Type
Vgs(th) (Max) of 2.7V @ 250A
Drive Voltage (Max Rds On, Min Rds On) of 4.5V, 10V
Operating Temperature Range of -55°C to 150°C (TJ)
Quality and Safety Features
RoHS3 Compliant
Compatibility
Compatible with various automotive and industrial applications
Application Areas
Suitable for use in automotive and industrial applications requiring N-channel MOSFET transistors
Product Lifecycle
Currently in production
Replacement or upgrade options may be available in the future
Several Key Reasons to Choose This Product
Automotive qualification (AEC-Q101) for reliability in automotive applications
Compact TO-236AB package for space-constrained designs
Wide operating temperature range of -55°C to 150°C
Suitable for high-current, high-voltage applications with its key technical parameters