Manufacturer Part Number
PMV100EPAR
Manufacturer
Nexperia
Introduction
P-channel enhancement-mode MOSFET transistor
Product Features and Performance
Automotive-qualified to AEC-Q101 standard
Trench MOSFET technology
Low RDS(on) for high efficiency
High current capability up to 2.2A
Wide operating temperature range of -55°C to 175°C
Product Advantages
Excellent power efficiency
High reliability for automotive applications
Compact surface-mount package
Key Technical Parameters
Drain-source voltage (VDS): 60V
Gate-source voltage (VGS): ±20V
On-resistance (RDS(on)): 130mΩ @ 2.2A, 10V
Continuous drain current (ID): 2.2A @ 25°C
Input capacitance (Ciss): 616pF @ 30V
Power dissipation: 710mW (Ta), 8.3W (Tc)
Quality and Safety Features
RoHS3 compliant
Automotive-grade AEC-Q101 qualified
Compatibility
Surface mount TO-236-3, SC-59, SOT-23-3 package
Application Areas
Automotive electronics
Industrial power supplies
DC-DC converters
Motor control
General purpose switching
Product Lifecycle
Currently in production
No immediate plans for discontinuation
Replacement or upgrade options available
Key Reasons to Choose
Excellent performance and efficiency for automotive applications
Reliable and robust design for harsh environments
Compact surface-mount package for space-constrained designs
Wide operating temperature range for versatile use cases
Automotive-grade quality and safety compliance
PMV-16V680MF-R2Elna America