Manufacturer Part Number
PMV130ENEAR
Manufacturer
NXP Semiconductors
Introduction
This product is a single N-channel MOSFET transistor suitable for a variety of power switching and amplifier applications.
Product Features and Performance
N-channel MOSFET structure
Low on-resistance of 120mΩ
Continuous drain current of 2.1A at 25°C
Wide operating temperature range of -55°C to 150°C
High drain to source voltage of 40V
Input capacitance of 170pF at 20V
Product Advantages
Efficient power switching and amplification
Compact surface mount package
Reliable performance across a wide temperature range
Key Technical Parameters
Drain to Source Voltage (Vdss): 40V
Gate-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 120mΩ
Continuous Drain Current (Id): 2.1A
Input Capacitance (Ciss): 170pF
Quality and Safety Features
Meets relevant industry standards for quality and safety
Robust construction and packaging for reliable operation
Compatibility
Suitable for a variety of power switching and amplifier applications
Application Areas
Power management circuits
Motor control
Lighting control
Industrial automation
Product Lifecycle
This product is an active and widely available part
Replacement or upgraded options may be available in the future
Key Reasons to Choose This Product
Efficient power switching and amplification performance
Compact and reliable surface mount package
Wide operating temperature range for versatile applications
Low on-resistance for reduced power losses
PMV100XPEANexperia