PMDXB950UPE - Nexperia USA Inc.

Manufacturer Part Number

PMDXB950UPE

Manufacturer

Nexperia

Introduction

Discrete Semiconductor Product

Transistors FETs, MOSFETs Arrays

Product Features and Performance

Series: TrenchFET

Operating Temperature: -55°C ~ 150°C (TJ)

Power Max: 265mW

Drain to Source Voltage (Vdss): Logic Level Gate

Rds On (Max) @ Id, Vgs: 500mA

Current Continuous Drain (Id) @ 25°C: 20V

Input Capacitance (Ciss) (Max) @ Vds: 2.1nC @ 4.5V

FET Feature: 2 P-Channel (Dual)

Vgs(th) (Max) @ Id: 1.4 Ohm @ 500mA, 4.5V

Gate Charge (Qg) (Max) @ Vgs: 950mV @ 250A

Voltage Test: 43pF @ 10V

Product Advantages

Lead free / RoHS Compliant

Suitable for Logic Level Gate applications

Key Technical Parameters

Drain to Source Voltage (Vdss): 20V

Continuous Drain Current (Id): 500mA

On-State Resistance (Rds(on)): 1.4 Ohm

Quality and Safety Features

RoHS Compliant

Compatibility

Compatible with various electronic circuits and systems

Application Areas

Suitable for use in a variety of electronic devices and circuits

Product Lifecycle

Currently available

Replacement or upgrade options may be available in the future

Key Reasons to Choose This Product

Efficient TrenchFET technology

Low on-state resistance

Compact 6-DFN (1.1x1) package

Suitable for Logic Level Gate applications

RoHS compliant for environmental safety