Manufacturer Part Number
PMDT290UNE,115
Manufacturer
Nexperia
Introduction
Dual N-channel MOSFET in a small SOT-666 package
Product Features and Performance
Trench MOSFET technology
Automotive and AEC-Q101 qualified
Very low on-resistance
Logic level gate
High avalanche energy capability
High reliability
Product Advantages
Compact size for space-constrained designs
High power density
Excellent thermal performance
Enhanced reliability for automotive applications
Key Technical Parameters
Drain to Source Voltage (Vdss): 20V
On-Resistance (Rds(on)): 380mΩ @ 500mA, 4.5V
Continuous Drain Current (Id): 800mA @ 25°C
Input Capacitance (Ciss): 83pF @ 10V
Gate Charge (Qg): 0.68nC @ 4.5V
Operating Temperature: -55°C to 150°C
Quality and Safety Features
RoHS3 compliant
AEC-Q101 qualified for automotive applications
Compatibility
SOT-563, SOT-666 package options
Compatible with various automotive and industrial applications
Application Areas
Automotive electronics
Industrial control systems
Power management circuits
General-purpose switching applications
Product Lifecycle
Currently in production
Replacements and upgrades may be available in the future
Key Reasons to Choose This Product
Compact size and high power density for space-constrained designs
Excellent thermal performance and reliability for demanding applications
Automotive and industrial qualification for reliable operation
Logic level gate for easy integration into various circuits
Wide operating temperature range for versatile use
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