PMDXB600UNEZ - Nexperia USA Inc.

Manufacturer Part Number

PMDXB600UNEZ

Manufacturer

Nexperia

Introduction

Discrete Semiconductor Product

Transistors FETs, MOSFETs Arrays

Product Features and Performance

Trench MOSFET

Dual N-Channel Configuration

Drain to Source Voltage (Vdss): 20V

RDS(on) (Max) @ Id, Vgs: 620mOhm @ 600mA, 4.5V

Continuous Drain Current (Id) @ 25°C: 600mA

Input Capacitance (Ciss) (Max) @ Vds: 21.3pF @ 10V

Gate Charge (Qg) (Max) @ Vgs: 0.7nC @ 4.5V

Logic Level Gate

Product Advantages

Low on-resistance

High current capability

Compact package

Key Technical Parameters

Package: 6-XFDFN Exposed Pad

Power Max: 265mW

Operating Temperature: -55°C ~ 150°C (TJ)

Vgs(th) (Max) @ Id: 950mV @ 250A

Quality and Safety Features

RoHS3 Compliant

Compatibility

Surface Mount

Application Areas

General Purpose Switching and Amplification

Product Lifecycle

Current product, no plans for discontinuation

Key Reasons to Choose This Product

Excellent performance in terms of on-resistance, current capability, and gate charge

Compact and thermally efficient package

Suitable for a wide range of general-purpose switching and amplification applications

RoHS3 compliant for environmentally-friendly use