Manufacturer Part Number
BUK9M85-60EX
Manufacturer
Nexperia
Introduction
N-channel TrenchMOS FET transistor in LFPAK33 package
Designed for automotive and industrial applications
Product Features and Performance
60V drain-source voltage (Vdss)
8A continuous drain current (Id) at 25°C
Low on-resistance of 73mΩ at 5A, 10V
Fast switching with low gate charge of 4.4nC at 5V
Wide operating temperature range from -55°C to 175°C
Product Advantages
Highly efficient power conversion with low power losses
Robust design for reliable operation in harsh environments
Compact LFPAK33 package for space-saving PCB layouts
Key Technical Parameters
Vdss: 60V
Vgs(max): ±10V
Rds(on) max: 73mΩ @ 5A, 10V
Id max: 12.8A @ 25°C
Ciss max: 434pF @ 25V
Power Dissipation max: 31W @ Tc
Quality and Safety Features
AEC-Q101 qualified for automotive applications
RoHS3 compliant for environmental responsibility
Compatibility
Suitable for use in a wide range of automotive and industrial applications
Application Areas
Power management and control circuits
Motor drives
Switching regulators
Inverters and converters
Product Lifecycle
Currently in production
Replacements and upgrades may be available in the future
Key Reasons to Choose This Product
High efficiency and low power loss for improved system performance
Robust design for reliable operation in harsh environments
Compact package for space-saving PCB layouts
Automotive and industrial grade qualification for versatile applications
BUK9M5R2-30EFreescale / NXP Semiconductors