Manufacturer Part Number
BUK9M9R1-40EX
Manufacturer
Nexperia
Introduction
High-power N-channel TrenchMOS FET with low on-resistance for automotive applications
Product Features and Performance
Low on-resistance for high efficiency
Rugged TrenchMOS technology
Suited for high-frequency switching applications
Optimized for low RDS(on) × Qg tradeoff
Automotive-qualified to AEC-Q101 standard
Product Advantages
Excellent thermal performance
High power density
Reliable and robust design
Optimized for use in automotive applications
Key Technical Parameters
Drain-source voltage (VDS): 40V
Gate-source voltage (VGS): ±10V
On-resistance (RDS(on)): 7.3mΩ @ 20A, 10V
Continuous drain current (ID): 64A @ 25°C
Input capacitance (Ciss): 2048pF @ 25V
Power dissipation (Pd): 75W
Quality and Safety Features
RoHS3 compliant
Automotive-grade quality and reliability
Compatibility
Suitable for use in a wide range of automotive applications, including:
Power supplies
Motor drives
Inverters
DC-DC converters
Application Areas
Automotive electronics
Industrial power management
Switched-mode power supplies
Product Lifecycle
This product is currently available and not nearing discontinuation. Replacement or upgraded models may be available in the future.
Key Reasons to Choose This Product
High power density and efficiency
Excellent thermal performance and reliability
Automotive-qualified for use in harsh environments
Optimized for low RDS(on) × Qg tradeoff, enabling efficient switching
Suitable for a wide range of automotive and industrial applications
BUK9M53-60EFreescale / NXP Semiconductors