Manufacturer Part Number
BUK9M52-40EX
Manufacturer
Nexperia
Introduction
Discrete Semiconductor Products
Transistors FETs, MOSFETs Single
Product Features and Performance
ROHS3 Compliant
Automotive, AEC-Q101, TrenchMOS
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±10V
Rds On (Max) @ Id, Vgs: 40mOhm @ 5A, 10V
MOSFET (Metal Oxide)
Current Continuous Drain (Id) @ 25°C: 17.6A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 407 pF @ 25 V
Power Dissipation (Max): 31W
N-Channel
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Gate Charge (Qg) (Max) @ Vgs: 4.5 nC @ 5 V
Product Advantages
ROHS3 Compliant
Automotive, AEC-Q101, TrenchMOS
High current handling capability
Low on-resistance
Key Technical Parameters
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±10V
Rds On (Max) @ Id, Vgs: 40mOhm @ 5A, 10V
Current Continuous Drain (Id) @ 25°C: 17.6A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 407 pF @ 25 V
Power Dissipation (Max): 31W
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 4.5 nC @ 5 V
Quality and Safety Features
ROHS3 Compliant
Automotive, AEC-Q101 qualified
Compatibility
Surface Mount
Application Areas
Automotive electronics
Industrial equipment
Power supplies
Motor drives
Product Lifecycle
Not nearing discontinuation
Replacements and upgrades available
Several Key Reasons to Choose This Product
ROHS3 Compliant
Automotive, AEC-Q101 qualified
High current handling capability
Low on-resistance
Suitable for a wide range of applications
BUK9M53-60EFreescale / NXP Semiconductors