Manufacturer Part Number
BSH114,215
Manufacturer
Nexperia
Introduction
N-Channel TrenchMOS Power MOSFET
Product Features and Performance
100V Drain to Source Voltage (Vdss)
500mA Continuous Drain Current (ID)
500mΩ On-Resistance (RDS(on))
138pF Input Capacitance (Ciss)
-55°C to 150°C Operating Temperature Range
Product Advantages
Low on-resistance for efficient power conversion
High power density and efficiency
Suitable for a wide range of power management applications
Key Technical Parameters
Vdss: 100V
Vgs (Max): ±20V
RDS(on) (Max): 500mΩ
ID (Continuous): 500mA
Ciss (Max): 138pF
Quality and Safety Features
RoHS3 compliant
TO-236AB package for reliable surface mount assembly
Compatibility
Suitable for use in power management, switching, and amplifier circuits
Application Areas
DC-DC converters
Motor drives
Lighting ballasts
Power supplies
Product Lifecycle
Currently in production
Replacement or upgrade options available from Nexperia
Key Reasons to Choose This Product
Excellent power efficiency and high power density
Wide operating temperature range
Compact and reliable TO-236AB package
Proven Nexperia TrenchMOS technology
BSH112LUMILEDS