Manufacturer Part Number
BSH201,215
Manufacturer
Nexperia
Introduction
The BSH201 and BSH215 are single P-channel enhancement-mode field-effect transistors (FETs) intended for general-purpose switching and amplifier applications.
Product Features and Performance
P-channel enhancement-mode MOSFET
Low on-resistance
High current handling capability
Wide operating temperature range (-55°C to 150°C)
Low gate charge for fast switching
Product Advantages
Suitable for a wide range of general-purpose switching and amplifier applications
Efficient power conversion with low on-resistance
Reliable operation across extended temperature range
Key Technical Parameters
Drain-to-source voltage (Vdss): 60V
Gate-to-source voltage (Vgs): ±20V
On-resistance (Rds(on)): 2.5Ω @ 160mA, 10V
Continuous drain current (Id): 300mA @ 25°C
Input capacitance (Ciss): 70pF @ 48V
Power dissipation (Ptot): 417mW @ 25°C
Quality and Safety Features
RoHS3 compliant
Suitable for surface mount applications
Compatibility
TO-236-3, SC-59, SOT-23-3 package
Application Areas
General-purpose switching and amplifier applications
Power management circuits
Driver circuits
Consumer electronics
Product Lifecycle
Currently available
No plans for discontinuation
Several Key Reasons to Choose This Product
Reliable operation across extended temperature range
Efficient power conversion with low on-resistance
Suitable for a wide range of general-purpose switching and amplifier applications
Easy to integrate into surface mount designs
BSH112(wnm6001)LUMILEDS