Manufacturer Part Number
BSH111BKR
Manufacturer
Nexperia
Introduction
The BSH111BKR is a N-channel enhancement-mode field-effect transistor (MOSFET) in a small surface-mount TO-236AB package. It is designed for general-purpose switching and amplification applications.
Product Features and Performance
Operates in the temperature range of -55°C to 150°C
Drain-to-Source voltage (Vdss) of 55V
Gate-to-Source voltage (Vgs) of ±10V
Maximum Drain-to-Source on-resistance (Rds(on)) of 4Ω at 200mA and 4.5V
Continuous Drain Current (Id) of 210mA at 25°C
Input Capacitance (Ciss) of 30pF at 30V
Maximum Power Dissipation of 302mW at 25°C
Gate Charge (Qg) of 0.5nC at 4.5V
Product Advantages
Small surface-mount package for compact designs
Low on-resistance for efficient power switching
Wide temperature range for reliability in diverse applications
Fast switching capability for high-frequency circuits
Key Technical Parameters
MOSFET Technology: N-Channel Enhancement-mode
Drain-to-Source Voltage (Vdss): 55V
Gate-to-Source Voltage (Vgs): ±10V
Drain-to-Source On-Resistance (Rds(on)): 4Ω
Continuous Drain Current (Id): 210mA
Input Capacitance (Ciss): 30pF
Power Dissipation (Max): 302mW
Quality and Safety Features
RoHS3 compliant for environmental responsibility
Reliable operation within the -55°C to 150°C temperature range
Compatibility
Suitable for a wide range of general-purpose switching and amplification applications
Application Areas
Power management circuits
Switching regulators
Motor control
Amplifiers
General-purpose switching
Product Lifecycle
The BSH111BKR is an active product with no plans for discontinuation.
Replacement or upgrade options may be available from the manufacturer.
Key Reasons to Choose This Product
Small, space-saving surface-mount package
Low on-resistance for efficient power switching
Wide operating temperature range for reliable performance
Fast switching capability for high-frequency applications
RoHS3 compliance for environmental responsibility
BSH112LUMILEDS