BC856A,215 - Nexperia USA Inc.

Manufacturer Part Number

BC856A,215

Manufacturer

Nexperia

Introduction

The BC856A,215 is a discrete PNP bipolar junction transistor (BJT) in the TO-236AB package.

Product Features and Performance

Automotive-grade transistor qualified to AEC-Q101 standard

High cutoff frequency of 100 MHz

Low collector-emitter saturation voltage of 650 mV at 5 mA, 100 mA

Collector current rating of up to 100 mA

Collector-emitter breakdown voltage of up to 65 V

Power dissipation of up to 250 mW

Operating temperature range of -55°C to +150°C

Product Advantages

Reliable performance in automotive and industrial applications

Compact TO-236AB package for space-constrained designs

Compliant with RoHS3 environmental directives

Key Technical Parameters

Transistor Type: PNP

DC Current Gain (hFE): Minimum of 125 at 2 mA, 5 V

Collector-Emitter Saturation Voltage: Maximum of 650 mV at 5 mA, 100 mA

Collector-Emitter Breakdown Voltage: Maximum of 65 V

Collector Current: Maximum of 100 mA

Collector Cutoff Current: Maximum of 15 nA

Transition Frequency: 100 MHz

Quality and Safety Features

Qualified to AEC-Q101 automotive standard for reliability

RoHS3 compliant for environmental safety

Compatibility

Compatible with TO-236-3, SC-59, and SOT-23-3 package footprints

Application Areas

Automotive electronics

Industrial control systems

Power management circuits

Analog and mixed-signal designs

Product Lifecycle

This product is not nearing discontinuation and is actively supported.

Replacement or upgrade options are available from the manufacturer.

Key Reasons to Choose This Product

Reliable automotive-grade performance

Compact and space-efficient package

High-frequency capabilities for advanced circuit designs

Compliance with RoHS3 environmental standards

Availability of replacement and upgrade options from the manufacturer