BC856A-7-F - Diodes Incorporated

Manufacturer Part Number

BC856A-7-F

Manufacturer

Diodes Incorporated

Introduction

Discrete Semiconductor Product

Transistors Bipolar (BJT) Single

Product Features and Performance

RoHS3 Compliant

SOT-23-3 package

Operating Temperature: -65°C ~ 150°C (TJ)

Power Max: 300 mW

Voltage Collector Emitter Breakdown (Max): 65 V

Current Collector (Ic) (Max): 100 mA

Current Collector Cutoff (Max): 15nA

Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA

Transistor Type: PNP

DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 2mA, 5V

Frequency Transition: 200MHz

Product Advantages

RoHS3 compliant

Wide operating temperature range

High power handling capability

High breakdown voltage

High collector current capacity

Low collector cutoff current

Low saturation voltage

High DC current gain

High transition frequency

Key Technical Parameters

Operating Temperature

Power Rating

Collector-Emitter Breakdown Voltage

Collector Current

Collector Cutoff Current

Vce Saturation Voltage

Transistor Type

DC Current Gain

Transition Frequency

Quality and Safety Features

RoHS3 Compliant

Compatibility

TO-236-3, SC-59, SOT-23-3 package

Tape & Reel (TR) packaging

Application Areas

General-purpose transistor applications

Amplifier circuits

Switching circuits

Logic gates

Biasing circuits

Product Lifecycle

Currently available

No information on discontinuation or replacement

Several Key Reasons to Choose This Product

RoHS3 compliance for environmental friendliness

Wide operating temperature range for versatile applications

High power handling, voltage, and current capabilities

Low saturation voltage and high current gain for efficient operation

High transition frequency for high-speed applications

Compatible with common surface mount packages and packaging