Manufacturer Part Number
BC856AS-7
Manufacturer
Diodes Incorporated
Introduction
Bipolar Junction Transistor (BJT) Array
Product Features and Performance
Dual PNP Transistor
Low Collector-Emitter Saturation Voltage
High Gain Bandwidth Product
Low Collector Cutoff Current
Wide Operating Temperature Range
Low Power Consumption
Product Advantages
Efficient power handling
Reliable performance
Compact design for space-constrained applications
Key Technical Parameters
Voltage Collector Emitter Breakdown (Max): 65V
Current Collector (Ic) (Max): 100mA
Current Collector Cutoff (Max): 15nA
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 2mA, 5V
Frequency Transition: 100MHz
Quality and Safety Features
RoHS3 Compliant
Reliable construction for long-lasting performance
Compatibility
Surface Mount Package: 6-TSSOP, SC-88, SOT-363
Tape & Reel Packaging
Application Areas
Analog and digital circuits
Amplifier and switching applications
Battery-powered devices
Portable electronics
Product Lifecycle
The BC856AS-7 is an active product and is not nearing discontinuation.
Replacement or upgrade options may be available from the manufacturer.
Key Reasons to Choose This Product
Efficient power handling and low power consumption
Reliable performance and long-lasting operation
Compact surface mount package for space-constrained designs
Wide operating temperature range for versatile applications
High-frequency capabilities for analog and digital circuits