Manufacturer Part Number
APTGT150SK120D1G
Manufacturer
Microsemi
Introduction
High-power discrete IGBT transistor module
Product Features and Performance
Trench field-stop IGBT technology
High power density
Low conduction and switching losses
Fast switching capability
Robust and reliable design
Product Advantages
Optimized for high-power industrial applications
Excellent thermal performance
Compact and easy to integrate
Key Technical Parameters
Power rating: 700 W
Collector-emitter voltage: 1200 V
Collector current: 220 A
On-state voltage drop: 2.1 V @ 150 A
Input capacitance: 10.8 nF @ 25 V
Quality and Safety Features
No internal NTC thermistor
Chassis mount package for reliable heat dissipation
Compatibility
Suitable for a wide range of high-power industrial applications
Application Areas
Variable speed drives
Uninterruptible power supplies (UPS)
Welding equipment
Induction heating systems
Power conversion and control systems
Product Lifecycle
Current production model, no imminent discontinuation
Replacement or upgraded models may become available in the future
Several Key Reasons to Choose This Product
High power density and efficiency for compact design
Robust and reliable performance for industrial use
Easy integration with chassis mount package
Optimized for demanding high-power applications
