Manufacturer Part Number
APTGT200A120G
Manufacturer
Microchip Technology
Introduction
High-power insulated gate bipolar transistor (IGBT) module with built-in diode, designed for industrial and power conversion applications.
Product Features and Performance
High-voltage IGBT with trench field-stop technology
Rated for up to 890 watts of power
Capable of operating from -40°C to 150°C junction temperature
Input capacitance of 14 nF at 25V
Collector-emitter breakdown voltage up to 1200V
Collector current up to 280A continuous, 350A peak
On-state voltage drop (Vce(on)) of 2.1V at 15V gate, 200A collector
Product Advantages
Compact, integrated design with high power density
Excellent thermal performance and reliability
Optimized for high-efficiency power conversion
Supports robust, high-current industrial applications
Key Technical Parameters
IGBT Type: Trench Field Stop
Input: Standard
Configuration: Half Bridge
Voltage Rating: 1200V
Current Rating: 280A continuous, 350A peak
Junction Temperature Range: -40°C to 150°C
Quality and Safety Features
RoHS3 compliant
Chassis mount package for secure installation
Compatibility
Compatible with standard industrial control and power conversion systems
Application Areas
Industrial motor drives
Power inverters and converters
Welding equipment
Uninterruptible power supplies (UPS)
Induction heating systems
Product Lifecycle
Current production, no plans for discontinuation
Replacement parts and upgrades available
Key Reasons to Choose This Product
High power capacity and efficiency for demanding applications
Robust thermal management for reliable operation
Compact, integrated design simplifies system integration
Compatibility with standard industrial control systems
Availability of replacement parts and upgrade options
APTGT200U170D4MicrosemiIGBT Module