Manufacturer Part Number
APTGT200TL60G
Manufacturer
Microchip Technology
Introduction
High-performance trench field-stop IGBT module for three-level inverter applications
Product Features and Performance
Operating temperature range: -40°C to 175°C
Maximum power: 652 W
IGBT type: Trench field stop
Input configuration: Standard
Three-level inverter configuration
Input capacitance (Cies) @ 25V: 12.2 nF
Collector-emitter breakdown voltage (max): 600V
Collector current (max): 300A
Collector-emitter saturation voltage (max) @ 15V, 200A: 1.9V
Collector current cutoff (max): 350A
Product Advantages
Optimized for three-level inverter applications
High power density and efficiency
Wide operating temperature range
Robust trench field-stop IGBT technology
Key Technical Parameters
Input capacitance (Cies): 12.2 nF @ 25V
Collector-emitter breakdown voltage (max): 600V
Collector current (max): 300A
Collector-emitter saturation voltage (max): 1.9V @ 15V, 200A
Collector current cutoff (max): 350A
Quality and Safety Features
RoHS3 compliant
No NTC thermistor
Compatibility
Chassis mount package (SP6)
Application Areas
Three-level inverter applications, such as industrial drives, renewable energy systems, and power conversion
Product Lifecycle
Current product offering, no information on discontinuation or replacements
Key Reasons to Choose This Product
Optimized for three-level inverter applications
High power density and efficiency
Wide operating temperature range
Robust trench field-stop IGBT technology
RoHS3 compliant
APTGT200U120D4MicrosemiIGBT Module