Manufacturer Part Number
APTGT25A120D1G
Manufacturer
Microsemi
Introduction
Discrete Semiconductor Product
Transistors IGBTs Modules
Product Features and Performance
RoHS Compliant
Chassis Mount Packaging
140 W Power Rating
Trench Field Stop IGBT Type
Standard Input
Half Bridge Configuration
8 nF Input Capacitance at 25 V
1200 V Collector-Emitter Breakdown Voltage
No NTC Thermistor
40 A Maximum Collector Current
1 V Collector-Emitter Saturation Voltage at 15 V, 25 A
5 mA Maximum Collector Cutoff Current
Product Advantages
Compact chassis mount packaging
High power handling capability
Reliable trench field stop IGBT technology
Optimized for half-bridge configurations
Key Technical Parameters
Power Rating: 140 W
IGBT Type: Trench Field Stop
Input Capacitance: 1.8 nF @ 25 V
Collector-Emitter Breakdown Voltage: 1200 V
Collector Current: 40 A Maximum
Collector-Emitter Saturation Voltage: 2.1 V @ 15 V, 25 A
Quality and Safety Features
RoHS Compliant
Compatibility
Suitable for various half-bridge applications
Application Areas
Power electronics
Motor drives
Inverters
Renewable energy systems
Product Lifecycle
Current production model, no discontinuation plans identified
Key Reasons to Choose This Product
High power handling capability
Reliable trench field stop IGBT technology
Optimized for half-bridge configurations
Compact chassis mount packaging
RoHS compliance for environmental safety
