Manufacturer Part Number
APTGT100A120D1G
Manufacturer
Microsemi
Introduction
This is a high-performance IGBT (Insulated Gate Bipolar Transistor) module from Microsemi, a leading manufacturer of discrete semiconductor products.
Product Features and Performance
Trench Field Stop IGBT technology
Standard input configuration
Half bridge configuration
Input capacitance (Cies) of 7 nF at 25 V
Collector-emitter breakdown voltage (max) of 1200 V
Collector current (max) of 150 A
Collector-emitter saturation voltage (max) of 2.1 V at 15 V, 100 A
Collector cutoff current (max) of 3 mA
Chassis mount packaging
Product Advantages
High power handling capability
High voltage and current ratings
Low on-state voltage drop
Efficient trench field stop IGBT design
Key Technical Parameters
Power rating: 520 W
IGBT type: Trench Field Stop
Input configuration: Standard
Package: D1 (Chassis mount)
Input capacitance (Cies): 7 nF @ 25 V
Collector-emitter breakdown voltage (max): 1200 V
Collector current (max): 150 A
Collector-emitter saturation voltage (max): 2.1 V @ 15 V, 100 A
Collector cutoff current (max): 3 mA
Quality and Safety Features
Robust and reliable design
Compliance with industry safety standards
Compatibility
Suitable for a wide range of power electronics applications, including motor drives, power supplies, and inverters.
Application Areas
Industrial automation
Power conversion
Renewable energy systems
Electric vehicles
Home appliances
Product Lifecycle
This product is currently in production and widely available.
No plans for discontinuation or replacement at this time.
Key Reasons to Choose This Product
High power handling capability
Excellent performance characteristics, including low on-state voltage drop and high voltage/current ratings
Efficient trench field stop IGBT design for improved efficiency
Robust and reliable construction for long-term, reliable operation
Compatibility with a wide range of power electronics applications
