APT75GN120J - Microsemi Corporation

Manufacturer Part Number

APT75GN120J

Manufacturer

Microsemi

Introduction

High-power insulated-gate bipolar transistor (IGBT) module

Designed for industrial and power conversion applications

Product Features and Performance

Trench field-stop IGBT technology

Optimized for high-speed and high-efficiency switching

Low conduction and switching losses

Wide operating temperature range of -55°C to 150°C

Product Advantages

Excellent thermal performance

Reliable and robust design

Compact and efficient power conversion

Key Technical Parameters

Collector-Emitter Voltage (VCES): 1200 V

Collector Current (IC): 124 A

On-State Voltage Drop (VCE(on)): 2.1 V

Input Capacitance (Cies): 4.8 nF

Quality and Safety Features

Integrated ISOTOP package for improved thermal management

No internal NTC thermistor

Compatibility

Suitable for industrial and power conversion applications, such as motor drives, power supplies, and inverters

Application Areas

Industrial automation

Power electronics

Renewable energy systems

Electric vehicles

Product Lifecycle

This product is currently available and not nearing discontinuation

Replacement or upgrade options may be available from Microsemi

Key Reasons to Choose This Product

High-efficiency and high-speed switching performance

Robust and reliable design for demanding applications

Excellent thermal management capabilities

Compact and space-saving ISOTOP package