APT75GN120B2G - Microchip Technology

Manufacturer Part Number

APT75GN120B2G

Manufacturer

Microchip Technology

Introduction

High-power IGBT (Insulated Gate Bipolar Transistor) for industrial and power electronics applications

Product Features and Performance

Trench field stop IGBT technology

High current capability up to 200A

Low collector-emitter saturation voltage (Vce(on))

Fast switching speed with short turn-on/turn-off times

High power density and efficiency

Capable of handling high voltages up to 1200V

Product Advantages

Improved performance and reliability

Reduced power losses and heat generation

Suitable for high-power, high-frequency switching applications

Key Technical Parameters

Voltage Collector Emitter Breakdown (Max): 1200V

Current Collector (Ic) (Max): 200A

Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A

Gate Charge: 425nC

Current Collector Pulsed (Icm): 225A

Switching Energy: 8045J (on), 7640J (off)

Td (on/off) @ 25°C: 60ns/620ns

Quality and Safety Features

ROHS3 compliant

Operating temperature range: -55°C to 150°C (TJ)

Compatibility

Standard IGBT input type

Through-hole mounting

Application Areas

Industrial motor drives

Power supplies

Welding equipment

Uninterruptible power supplies (UPS)

Induction heating systems

Renewable energy systems

Product Lifecycle

This product is currently in production and availability is good.

Several Key Reasons to Choose This Product

Excellent performance characteristics, including high current capability, low saturation voltage, and fast switching speed

Robust and reliable design for high-power, high-frequency applications

Efficient operation with low power losses and heat generation

Versatile compatibility and suitability for a wide range of industrial and power electronics applications