APT75GN60BG - Microchip Technology

Manufacturer Part Number

APT75GN60BG

Manufacturer

Microchip Technology

Introduction

This product is a discrete semiconductor device, specifically an IGBT (Insulated Gate Bipolar Transistor) transistor.

Product Features and Performance

Trench Field Stop IGBT design

High power handling capability up to 536W

High voltage rating up to 600V

High current rating up to 155A continuous, 225A pulsed

Low on-state voltage drop of 1.85V at 75A

Fast switching with turn-on time of 47ns and turn-off time of 385ns

High gate charge of 485nC

Product Advantages

Efficient power conversion and control

Rugged and reliable performance

Suitable for high-power switching applications

Key Technical Parameters

Collector-Emitter Breakdown Voltage (V_CE(BR)): 600V

Collector Current (I_C): 155A continuous, 225A pulsed

On-state Voltage Drop (V_CE(on)): 1.85V @ 15V, 75A

Switching Energy (E_on, E_off): 2500J (on), 2140J (off)

Switching Times (T_d(on), T_d(off)): 47ns, 385ns

Quality and Safety Features

RoHS3 compliant

TO-247 package with through-hole mounting

Operating temperature range: -55°C to 175°C

Compatibility

This IGBT is designed for use in a wide range of power electronics and industrial applications.

Application Areas

Motor drives

Power inverters

Uninterruptible power supplies (UPS)

Welding equipment

Induction heating

Power supplies

Product Lifecycle

This product is an active and widely used IGBT in the Microchip Technology portfolio. There are no immediate plans for discontinuation, and replacement or upgrade options are available.

Key Reasons to Choose This Product

Excellent power handling and efficiency

Reliable and rugged performance

Suitable for high-power, high-voltage applications

Fast switching capabilities for improved system response

RoHS3 compliance for environmental responsibility

Broad compatibility and suitability for various industrial applications