Manufacturer Part Number
APT75GN60BG
Manufacturer
Microchip Technology
Introduction
This product is a discrete semiconductor device, specifically an IGBT (Insulated Gate Bipolar Transistor) transistor.
Product Features and Performance
Trench Field Stop IGBT design
High power handling capability up to 536W
High voltage rating up to 600V
High current rating up to 155A continuous, 225A pulsed
Low on-state voltage drop of 1.85V at 75A
Fast switching with turn-on time of 47ns and turn-off time of 385ns
High gate charge of 485nC
Product Advantages
Efficient power conversion and control
Rugged and reliable performance
Suitable for high-power switching applications
Key Technical Parameters
Collector-Emitter Breakdown Voltage (V_CE(BR)): 600V
Collector Current (I_C): 155A continuous, 225A pulsed
On-state Voltage Drop (V_CE(on)): 1.85V @ 15V, 75A
Switching Energy (E_on, E_off): 2500J (on), 2140J (off)
Switching Times (T_d(on), T_d(off)): 47ns, 385ns
Quality and Safety Features
RoHS3 compliant
TO-247 package with through-hole mounting
Operating temperature range: -55°C to 175°C
Compatibility
This IGBT is designed for use in a wide range of power electronics and industrial applications.
Application Areas
Motor drives
Power inverters
Uninterruptible power supplies (UPS)
Welding equipment
Induction heating
Power supplies
Product Lifecycle
This product is an active and widely used IGBT in the Microchip Technology portfolio. There are no immediate plans for discontinuation, and replacement or upgrade options are available.
Key Reasons to Choose This Product
Excellent power handling and efficiency
Reliable and rugged performance
Suitable for high-power, high-voltage applications
Fast switching capabilities for improved system response
RoHS3 compliance for environmental responsibility
Broad compatibility and suitability for various industrial applications