Manufacturer Part Number
NAND08GW3C2BN6E
Manufacturer
Micron Technology
Introduction
The NAND08GW3C2BN6E is a high-capacity, high-performance NAND flash memory device from Micron Technology. It offers a storage capacity of 8Gbit with a parallel interface, making it suitable for a wide range of applications.
Product Features and Performance
8Gbit NAND flash memory
1G x 8 memory organization
Parallel interface
25ns write cycle time and access time
7V to 3.6V operating voltage
-40°C to 85°C operating temperature range
48-TFSOP (0.724", 18.40mm Width) package
Product Advantages
High-density storage capacity
Fast read and write speeds
Wide operating voltage and temperature range
Compact surface mount package
Key Reasons to Choose This Product
Reliable and durable NAND flash technology from a trusted manufacturer
Ideal for applications requiring high-capacity, high-performance non-volatile memory
Versatile interface and packaging options to fit various system designs
Quality and Safety Features
Rigorous quality control and testing processes
Compliance with industry standards and regulations
Compatibility
Compatible with a wide range of embedded systems and devices
Application Areas
Embedded systems
Industrial automation
Consumer electronics
Data storage and backup solutions
Product Lifecycle
This product is currently listed as Obsolete, meaning it is no longer in active production. There may be equivalent or alternative models available from Micron Technology or other manufacturers. Customers are advised to contact our website's sales team for more information on available options.
NAND08GW3B2AN6STMicroelectronics