Manufacturer Part Number
NAND04GW3C2BN6E
Manufacturer
Micron Technology
Introduction
This high-capacity NAND flash memory chip from Micron Technology offers a 4Gbit storage capacity, making it an ideal choice for a wide range of embedded applications that require reliable and high-density non-volatile memory. With its parallel interface and fast access times, this memory module can support efficient data storage and retrieval in a compact surface-mount package.
Product Features and Performance
4Gbit (512M x 8) of NAND flash memory
Parallel memory interface for quick data access
25ns write cycle time and 25ns access time
Operating voltage range of 2.7V to 3.6V
Wide operating temperature range of -40°C to 85°C
Product Advantages
High-density storage capacity in a small footprint
Fast read and write performance for efficient data handling
Wide voltage and temperature range for versatile applications
Reliable and durable non-volatile memory solution
Key Reasons to Choose This Product
Robust and proven NAND flash technology from a trusted manufacturer
Optimal balance of storage capacity, speed, and power efficiency
Suitable for a variety of embedded systems and applications
Cost-effective solution for high-density memory requirements
Quality and Safety Features
Rigorous quality control and testing during manufacturing
Compliance with industry standards and regulations
Robust design for reliable long-term operation
Compatibility
This NAND flash memory chip is designed to be compatible with a wide range of embedded systems and devices that require high-density non-volatile storage.
Application Areas
Industrial automation and control systems
Automotive electronics
Consumer electronics
Portable devices
Networking and telecommunications equipment
Product Lifecycle
This NAND04GW3C2BN6E memory chip is currently in the obsolete phase of its lifecycle. Customers should consult with our website's sales team for information on equivalent or alternative models that may be available.
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