Manufacturer Part Number
NAND04GW3B2DN6E
Manufacturer
Micron Technology
Introduction
NAND Flash Memory for data storage applications
Product Features and Performance
Non-Volatile memory technology
FLASH - NAND Technology
Parallel Memory Interface for faster data transfer
Write Cycle Time of 25ns
Access Time of 25ns
4Gbit Memory Size for ample storage
Product Advantages
High storage capacity
Reliable data retention
Efficient write and access times
Suitable for rigorous operating temperature range
Key Technical Parameters
Memory Size: 4Gbit
Memory Organization: 512M x 8
Supply Voltage: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C
Quality and Safety Features
Stable performance within specified temperature range
Compliance with industry standards for memory products
Compatibility
Surface Mount for PCB assembly
48-TFSOP Packaging
Application Areas
Mobile devices
Digital cameras
Solid-state drives
Embedded systems
Product Lifecycle
Discontinued at Digi-Key
Alternatives may be available from manufacturer or other suppliers
Several Key Reasons to Choose This Product
Large memory capacity for extensive data storage needs
Fast read/write operations enhancing device performance
Robust design ensuring reliability across different temperature conditions
Versatility in application across various industries and products
Ease of integration due to standard Surface Mount package and parallel interface
NAND02GW3B2DNBSTMicroelectronics
NAND02GW3B2DZA6FNUMONYX MEM