NAND02GW3B2DN6E - Micron Technology Inc.

Manufacturer Part Number

NAND02GW3B2DN6E

Manufacturer

Micron Technology

Introduction

The NAND02GW3B2DN6E is a 2Gbit FLASH memory device utilizing NAND technology, designed for high-capacity data storage solutions.

Product Features and Performance

Non-Volatile FLASH Memory

High-density 2Gbit storage

Parallel memory interface

Fast write cycle time and access time of 25ns

Operates across a wide voltage range of 2.7V to 3.6V

Suitable for operation in extreme temperature conditions from -40°C to 85°C

Product Advantages

Large storage capacity for bulk data applications

Fast data processing speeds

Flexible voltage requirements for compatibility with various devices

Reliable performance in harsh environmental conditions

Key Technical Parameters

Memory Size: 2Gbit

Memory Organization: 256M x 8

Memory Interface: Parallel

Voltage Supply: 2.7V ~ 3.6V

Operating Temperature: -40°C ~ 85°C

Quality and Safety Features

Manufactured by Micron Technology, known for high-quality memory products

Ensures data integrity and reliability in various applications

Compatibility

Designed for devices needing high-capacity storage and fast data access

Compatible with a wide range of applications due to its parallel interface and voltage flexibility

Application Areas

Embedded systems

Digital cameras and multimedia devices

High-capacity data logging

Mobile devices and smartphones

Product Lifecycle

Discontinued at Digi-Key, suggesting it may be nearing the end of its production life

Potentially limited availability, with replacements or upgrades advisable to consider

Several Key Reasons to Choose This Product

High-density 2Gbit storage for extensive data requirements

Fast access and write times enhance device performance

Wide operating temperature range suits challenging environments

Manufactured by Micron Technology, a leader in memory solutions

Compatibility with a broad spectrum of applications and devices